➀ SK hynix and ASML have assembled the industry's first High-NA EUV lithography system (Twinscan NXE:5200B) in South Korea, marking a leap in DRAM production technology;
➁ The 0.55 NA system enables higher resolution (8nm vs. 13nm) and 2.9x transistor density, reducing reliance on multi-patterning for advanced nodes;
➂ Initial R&D use will accelerate prototyping for AI memory, with mass production of High-NA-based DRAM expected post-2030.